features l planar die construction l 200mw power dissipation l zener voltages from 2.4v - 39v l ideally suited for automated assembly processes mechanical data l case: sod - 323 molded plastic l terminals: solderable per mil-std-202, method 208 l approx. weight: 0.008 gram l mounting position: any l storage & operating ju nct i on temperature: - 55 o c to +150 o c maximum ratings @ 25 o c unless otherwise specified zener current i f 100 ma maximum forward voltage v f 1.2 v power dissipation ( no te s a ) p (av) 2 00 mwatt pe ak f o r w ar d s ur ge i f sm 2 . 0 a mps notes: bzt52c2v4s thru bzt52c39s 200 mw zener diodes 2.4 to 39 volts mcc ww w . mccsemi .com a. mounted on 5.0mm2(.013mm thick) l a nd ar e a s . b. me a sured on 8.3ms, single ha l f sine-wave or equivalent c ur rent (not e s b) square wave, duty cycle = 4 pulses per minute maximum . inches mm dim min max min ma x note a .090 .107 2.30 2.70 b .06 8 .07 8 1. 75 1. 9 5 c .045 .05 4 1.15 1.35 d .0 27 .0 38 0. 7 0 0. 95 e .0 09 .01 4 0.25 0. 35 f .00 2 .0 06 0. 05 0. 1 5 g . 012 --- 0. 30 --- sod323 0. 0 31 ? 0.0 59 " 0.0 39 ? suggested solder pad layout a b e c d f g dimensions
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ww w . mccsemi .com bzt52c2v4s th ru bz t 52 c 39 s mcc electrical characteristics @ 25 o c unless otherwise specified normal zener voltage vz@ izt test current izt maximum zener impedance ?b? suffix only zzt @ izt zzk @ izk=0.25ma maximum reverse leakage current ir @ vr t yp i ca l temp coefficient mcc part number marking volts ma ohms ohms ua volts t c bz t 5 2 c 2v 4s w1 2.4 5 85 600 100 1.0 - 0.0 7 5 bz t 52 c 2 v 7 s w2 2. 7 5 83 500 75 1.0 - 0.0 6 5 bzt 52 c 3 s w3 3. 0 5 95 500 50 1.0 - 0.0 6 0 bz t 52 c 3 v 3 s w4 3. 3 5 95 500 25 1.0 - 0.0 5 5 b z t 52 c 3 v 6 s w5 3. 6 5 95 500 1 5 1.0 - 0.0 55 b z t 52 c 3 v 9 s w6 3. 9 5 95 500 1 0 1.0 - 0.0 50 bzt52c 4 v 3 s w7 4. 3 5 95 500 5 .0 1.0 - 0.0 35 bzt52c 4 v 7 s w8 4. 7 5 7 8 500 5.0 2 .0 - 0.0 15 bzt52c 5 v 1 s w9 5. 1 5 60 480 0. 1 0. 8 + 0.0 05 bzt52c 5 v 6 s wa 5. 6 5 40 400 0. 1 1 .0 + 0.0 20 bzt52c 6 v 2 s wb 6.2 5 10 200 0. 1 2 .0 +0.03 0 bzt52c 6 v 8 s wc 6. 8 5 8.0 150 0. 1 3 .0 +0.045 bzt52c 7 v 5 s wd 7. 5 5 7 .0 50 0. 1 5.0 +0.050 bzt52c 8 v 2 s we 8. 2 5 7 .0 50 0. 1 6.0 +0.05 5 bzt52c 9 v 1 s wf 9. 1 5 10 50 0. 1 7.0 +0.06 5 bzt52c 10 s wg 10 5 1 5 70 0 . 1 7. 5 +0.0 70 bzt52c 11 s wh 1 1 5 20 70 0. 1 8. 5 +0.075 bzt52c 12 s wi 1 2 5 2 0 90 0. 1 9. 0 +0.0 80 bzt52c1 3 s wk 1 3 5 25 11 0 0.1 10 +0.0 80 bzt52c1 5 s wl 1 5 5 30 11 0 0. 1 11 +0.0 90 bzt52c1 6 s wm 1 6 5 4 0 17 0 0.1 1 2 +0.0 90 bzt52c1 8 s wn 1 8 5 50 17 0 0.1 1 4 +0.0 90 bzt52c 20 s wo 20 5 50 22 0 0.1 1 5 +0.0 90 bzt52c 22 s wp 2 2 5 55 22 0 0.1 1 7 +0.0 90 bzt52c 24 s wr 2 4 5 80 220 0.1 1 8 +0.0 90 bzt52c 27 s ws 2 7 5 80 25 0 0.1 20 +0.0 90 bzt52c 30 s wt 30 5 80 25 0 0.1 2 2. 5 +0.090 bzt52c 33 s wu 33 5 80 25 0 0.1 2 5 +0.09 0 bzt52c 36 s ww 3 6 5 90 25 0 0.1 2 7 +0.09 0 bzt52c 39 s wx 3 9 5 90 30 0 0.1 2 9 +0. 11 0 note: 1.tolerance and type number designation. the type numbers listed have a standard tolerance on the nominal zener voltage of 5%. 2.specials available include: a. nominal zener voltages between the voltages shown and tighter voltage tolerances. b. matched sets. 3.zener voltage (v z ) measurement. guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (t l ) at 30 o c, from the diode body. 4. zener impedance (z z ) derivation. the zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (i zt or i zk ) is superimposed on i zt or i zk . 5. surge current (i r ) non-repetitive. the rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, i zt , per jedec registration; however, actual device capability is as described in figure 5.
bzt52c2v4s th ru bzt52c39s ww w . mccsemi .com mcc typical reverse current tempera ture c oefficient ,mv / c) o nominal zener voltage, volts -1 0 1 2 3 4 5 6 7 8 12 11 10 98765432 -2 -3 steady s tate power derating effect of zener voltage on zener impedance 100101 1000 100 10 1 i z =1ma 5ma 20 ma dynamic impedance, normal zener voltage, volts t j =25 c o i z(ac)=0.1 i f=1 khz z(dc) for w ard c urrent ,m a typical forward voltage forward voltage, volts 1.21.11.00.90.80.70.60.50.4 1000 100 10 1 75 c o 5c o 25 c o 150 c o typical capacitance 100 1000 100 10 1 101 bias at 50% of v z nom 0 v bias 1 v bias cap acit ance, pf nominal zener voltage, volts t =25 c a o 100 10 1 nominal zener voltage, volts tempera ture c oefficient ,mv / c) o 10 100 temperature ( c) o power d issip a tion, w atts steady s tate power derating 1.2 1.0 0.8 0.6 0.4 0.2 0 150125100755025 p dv . s .t a 155
bzt52c2v4s th ru bzt52c39s mcc ww w . mccsemi .com zener voltage v.s. zener current typical leakge current 90 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80706050403020100 leakage current ( a) nominal zener voltage, vlots +150 c o +25 c o -55 c o 12 100 10 1 0.1 0.01 1086420 zener current ,m a zener voltage, volts t =25 c a o 100 10 1 0.1 0.01 10 30 50 70 90 t =25 c a o zener voltage, volts zener voltage v.s. zener current zener current ,m a
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